Abstract
ABSTRACTThe influence of cooling air and cooling water parameters on the wafer temperature was studied in an RTP system with lamp power control. With a cool down time of 150 seconds between consecutive heating cycles, the wafer temperature in a 1050 °C process was highly sensitive to cooling air flow. With a cool down time of 330 seconds the sensitivity dropped a factor of 5. This was explained through the effect of radiative heat transfer from the quartz to the wafer at higher quartz temperatures (>200 °C). Other factors are variations in the water flow through the oven walls and the repeatability of wafer positioning.
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