Abstract
Optimum vapor pressure for stoichiometry in growth of PbTe and PbSnTe has been calculated. The result is in a good agreement with the experimentally obtained ones for vapor pressure controlled Bridgman growth and liquid phase epitaxy. The procedure of calculation follows that performed earlier for GaAs, which assumed the equality of the chemical potentials of the volatile element in gas, liquid and solid phases. Also it is pointed out that the nonequilibrium reactions of interstitial Te atoms with Pb vacancies forming anti-site Te, as well as Te precipitations, take place at the highest applied Te vapor pressure region.
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