Calculation of temperature dependence of cyclotron transition absorption line-widths in Ge and Si by a projection technique

Abstract

Starting with Choi and Chung's lineshape formula [ Solid State Commun. 46, 717 (1983)] and choosing the deformation potential constant E 1 as the fitting parameter, we calculate the cyclotron transition absorption linewidths in Ge and Si in the quantum limit. With E 1 = 12.4 eV for Ge and E 1 = 9.8 eV for Si, the temperature dependence of the width agrees well with the experimental data of Kobori, Ohyama and Otsuka [ J. Phys. Soc. Jpn. 59, 2164 (1990)] and with the theoretical result of Cho and Choi [ Phys. Rev. B49, 14301 (1994-II)].