Abstract
The diffusion of ion implanted boron in the emitter region of a microwave p-n-p bipolar transistor has been studied. Boron implantations were performed in the dose range 3 × 10 15 −1 × 10 16 cm −2 and the annealing time at 900°C was changed from 30 to 120 min. The four stream diffusion model was applied to calculate electrically active and inactive boron profiles. Calculated profiles were compared to the experimental one obtained using secondary-ion mass spectrometry and the incremental sheet resistance method. The Boltzmann-Matano analysis technique was applied to the diffusion profiles obtained and the variation of the effective boron diffusion coefficient with implanted dose and annealing time was determined. Electrical activity was also determined for different boron doses and annealing times.
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