Year-end Sale % OFF 
Abstract
A mobility analysis of ionized impurity scattering is performed for the calculation of the impurity concentrations of liquid-phase-epitaxial (LPE) InP layers. The donor and acceptor concentrations (Nd, Na) calculated by the method explain the temperature dependence of the Hall coefficient of InP layers in the range of carrier concentration n=2×1015-2×1016 cm-3 well. By applying the calculation to Hall data on undoped and lightly Cd-doped InP specimens with a growth temperature of 650°C, the effective distribution coefficient of Cd is determined as KCd=1.8×10-3.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
