Growth of 1.55 μm DH laserstructures using TBAs and TBP in MOMBE

Abstract

In a comparative study we have chosen TBAs and TBP as well as AsH 3 and PH 3 for the growth of InP/GaInAs(P) heterostructures for laser applications in a production metalorganic molecular beam epitaxy (MOMBE) system. The n-type doping was performed with Si from an effusion cell, whereas for the p-type doping Be and DEZn were utilized. InP layers using TBP under optimized cracking conditions exhibit excellent surface morphology with good electrical properties in the low 10 15 cm -3 range of carrier concentrations. The MOMBE growth mechanism is not disturbed by the hydride replacement compound. This allows for a convenient replacement without losing calibration data from the hydride process. Broad-area DH laserstructures with GaInAsP (λ = 1.55 μm) active regions were grown with AsH 3 /PH 3 and TBAs/TBP. Comparable threshold current densities in the range of 1.6-2.3 kA/cm 2 are achieved for the lasers, grown with both sets of precursors combined with DEZn source doping. These results are in good agreement with the standard set by the hydride MOVPE process.