Abstract
Cadmium sulfide (CdS), an II-VI group semiconductor material, is one of the most investigated semiconductors in thin film form. In this work, we synthesized CdS thin films with improved film morphology in the presence of ethylene diamine (EA) as the complexing agent by chemical bath deposition (CD) at lower pH. Detailed characterization reveals the presence of cubic phase CdS with a band gap of 2.39 eV with the resultant morphology significantly influenced by the composition of the growth solution. The resultant CdS films finds prospective application as a humidity sensor with a high sensor response of 2.61 corresponding to 80% relative humidity.
Published Version
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