Abstract
A c-axial oriented (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 thin film has been grown on a (0 0 1) Nb doped SrTiO3 substrate by pulsed laser deposition. The permittivity, dielectric loss and tunability of the c-axial oriented film are 187, 0.002 and 6% (at 750 kV cm−1 biasing), respectively, indicating a figure of merit of 30. Moreover, an asymmetry behaviour is observed in the dc electric field dependence of permittivity, which could be attributed to the asymmetry of top and bottom electrodes.
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