Abstract
We report the monolithic integration of an InGaAs metal-semiconductor-metal Schottky barrier photodetector with a butt-coupled InP/InGaAsP/InP waveguide, where the latter is formed by selective area regrowth using organometallic chemical vapor deposition. A fast pulse response (60–65 ps full width at half maximum, with no discernible tail) and a high quantum efficiency (∼80%) were observed for 1.3 μm guided light with the detector biased at 7 V. A thin InAlAs Schottky barrier enhancement layer limited the dark current to ∼28 nA at this bias.
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