Abstract
Shallowly buried dislocation networks (DNs) can be used to organize the formation of epitaxial semiconductor quantum dots, via the periodic strain field induced at the growth front. We fabricate such DNs by bonding epitaxially two GaAs crystals twisted and tilted with respect to each other and studied them by transmission electron microscopy. The DNs differ greatly from the mere superposition of a square screw DN and of a one-dimensional mixed DN accommodating, respectively twist and tilt. We present a detailed quantitative analysis of these DNs and explain how their properties relate to the crystal disorientations. Dislocation interaction generates a surface pattern of dilatational and compressive strain favouring the ordered growth of (Ga)InAs nanostructures.
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