Abstract
We study by transmission electron microscopy shallowly buried dislocation networks (DNs). These DNs are grain boundaries (GBs) that form, between a thin GaAs layer and a GaAs substrate joined together by wafer bonding, in order to accommodate a tilt and a twist between these two crystals. These GBs are composed of a one-dimensional network of mixed dislocations and of a one dimensional network of screw dislocations (whereas a two-dimensional (2D) one is usually observed) forming hexagonal cells. These GBs generate a 2D surface pattern of dilatational and compressive strain adapted to the ordered growth of nanostructures which we demonstrate experimentally for GaAs and InGaAs nanostructures. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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