Buried channel charge-coupled device on gas-source MBE grown InP

Abstract

The first epitaxial-channel InP CCDs on semi-insulating substrates have been demonstrated using gas-source MBE grown layers. Channel isolation was achieved using a mesa etch, and the two level overlapping gate structure was insulated using indirect plasma enhanced CVD grown SiO2. Initial results indicate stale device operation with charge transfer efficiencies, at 1–3MHz operating frequencies, of ∼0.99.