Abstract
Buried channel charge coupled devices are particularly sensitive to the effects of bulk state impurities on such device characteristics as thermal leakage current, charge transfer efficiency, and noise. This paper reviews the statistics relevant to these effects and describes an improved application of the double pulse experiment for probing bulk impurities. This experiment found that the dominant impurity in our devices had an energy level 0.404 eV from one of the bandedges and determined a lower limit of 1013 cm−3 for the concentration. A close match with previously reported results suggests that this energy level is referenced to the valence band and represents iron. By eliminating the corrosive gas used to getter sodium in the thermal oxides, the source of iron was removed and the affected device characteristics improved about two orders of magnitude.
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