Abstract
AbstractThis paper reviews research on advanced bulk crystal growth of SiC. A brief review highlights the benefits of the so called Modified Physical Vapor Transport Technique which uses an additional gas pipe for fine tuning of the growth cell of a conventional Physical Vapor Transport setup with additional gases. Main emphasis, however, will be laid on a systematic dislocation evolution study for various growth parameter sets. Besides doping, growth temperature was considered. Two main results were found: (i) In p‐type SiC, irrespective of the incorporation of aluminum or boron acceptors, basal plane dislocations that are harmful for bipolar power devices appear less pronounced or are even absent compared to n‐type SiC. (ii) Growth at elevated seed temperature (i.e. 2300 °C and higher) is beneficial for low dislocation densities. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
