Abstract
ABSTRACTThe paper reviews the basics of SiC bulk growth by the physical vapor transport (PVT) method and discuss current and possible future concepts to improve crystalline quality. In-situ process visualization using x-rays, numerical modeling and advanced doping techniques will be briefly presented which support growth process optimization. The “pure” PVT technique will be compared with related developments like the so called Modified-PVT, Continuous-Feeding-PVT, High-Temperature-CVD and Halide-CVD concepts. Special emphasis will be put on dislocation generation and annihilation and concepts to reduce dislocation density during SiC bulk crystal growth. The dislocation study is based on a statistical approach. Rather than following the evolu-tion of a single defect, statistic data which reflect a more global dislocation density evolution are interpreted. In this context a new approach will be presented which relates thermally induced strain during growth and dislocation patterning in networks.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
