Abstract
Antimony doped tin disulphide (SnS2:Sb) thin films have been prepared by the spray pyrolysis technique at the substrate temperature of 300°C. The properties of the films were studied as a function of antimony dopant concentration (up to 10at%). The XRD analysis revealed that the films were polycrystalline in nature and having hexagonal crystal structure with a preferred orientation along (002) direction. The optical energy band gap values were decreased from 2.50eV to 2.05eV with increase in Sb concentration and the PL spectra showed strong emission peak around at 470nm. The film has the lowest resistivity of 1.088×102Ωcm while higher carrier concentration was obtained at 8at% of Sb.
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