Abstract
Electronic properties of a CdTe solar cell are reported using temperature-dependent capacitance spectroscopy and current-voltage characteristics, the latter in dark and illuminated conditions. The baseline solar cell material stack investigated is comprised of soda-lime-glass/SnO2:F/SnO2/CdS:O-buffer/CdTe-absorber/Cu/Au. Device properties are compared with CdTe solar cells in which the back surface was hydroiodic acid etched, before the back-contact formation, and a CdTe device in which Mg-doped ZnO (MZO) replaces buffer layers. Reduced back-contact barrier height and grain boundary barrier height are observed in the hydroiodic acid treated CdTe cell. Improved device performance in the MZO-based CdTe device is attributed to reduced emitter/absorber interface recombination when using the MZO window layer.
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