Abstract
We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma etching. An optimized nanostructured surface shows a reduced surface reflectivity down to less than 2.5% in the visible range of 450–700 nm and an average reflectance of less than 4% over a broad near-infrared wavelength range from 900–1400 nm. The results are obtained over a wide incidence angle of 33.3°. This study shows the potential for anti-reflective structures using a simpler reverse EBL process which can provide optical absorption or extraction efficiency enhancement in semiconductors relevant to improved performance in solar photovoltaics or light-emitting diodes.
Highlights
Nanostructured GaAs with variable electron-beam lithography (EBL) exposure dosesThis simulation study indicates that surface patterning in GaAs has drastically reduced the surface reflections and increases the total optical absorption power (83%) in the GaAs substrate over a broad wavelength range (450–700 nm) and the maximum power absorbed through the volume of the substrate is 6.8 × 1020 Wm−3
We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL)
This study shows the potential for anti-reflective structures using a simpler reverse EBL process which can provide optical absorption or extraction efficiency enhancement in semiconductors relevant to improved performance in solar photovoltaics or light-emitting diodes
Summary
This simulation study indicates that surface patterning in GaAs has drastically reduced the surface reflections and increases the total optical absorption power (83%) in the GaAs substrate over a broad wavelength range (450–700 nm) and the maximum power absorbed through the volume of the substrate is 6.8 × 1020 Wm−3. This texturing can find application in efficiency enhancement in solar photovoltaics towards broad-spectrum solar energy harvesting
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