Abstract
Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60º) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.
Highlights
For generation photovoltaic cells, one of the key challenges for further development is how to achieve broadband and wide angle antireflection at the front surface within the AM1.5 solar spectrum
We have demonstrated Silicon nanowires (SiNWs) with a core-shell structure using VLS method which has potential for large area photovoltaic cell applications
Present SiNW works on photovoltaic field are largely focused on how to fabricate aligned and ordered nanowire arrays to increase device efficiency,[33] the high costs associated with complicated process makes it difficult to apply in large scale
Summary
For generation photovoltaic cells, one of the key challenges for further development is how to achieve broadband and wide angle antireflection at the front surface within the AM1.5 solar spectrum. Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection (Received 9 March 2011; accepted 20 July 2011; published online 1 August 2011)
Sign-in/Register to view highlights & summary 
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call