Abstract
In this paper, a broadband non-destructive and non-contact local characterization of graphene fabricated by epitaxial method on silicon carbide is demonstrated by using an interferometer-based near-field microwave microscope. First, a method has been proposed to extract the dielectric properties of silicon carbide, and finally, the graphene flake has been characterized as a resistance (∼20 kΩ) and a small inductance (360 pH) in the frequency band (2–18 GHz). The advantage of the proposed method is that there is no need to fabricate electrodes on the sample surface for the characterization. The instrument proposed is a good candidate for the local characterization of 2D materials.
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