Abstract
AbstractThe optical gain of single and multiple quantum well systems fabricated from InGaAsN/GaAs was investigated. We performed a numerical analysis to find structures which would increase the gain bandwidth for application in semiconductor optical amplifiers and broadband tunable lasers. A 10‐band k · p Hamiltonian was used to calculate TE modal gain spectra. First, we calculated the gain spectra of a single quantum well for varying nitrogen compositions and well widths at fixed carrier density. Next, we calculated the gain spectra for two‐ and three‐quantum‐well systems which used the compositions and sizes of the previously analyzed single wells. The three‐quantum‐well system had an approximate 100% increase of gain bandwidth in comparison with a single quantum well. This increase is due to carefully selected different values of nitrogen compositions in various quantum wells. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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