Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant

V Khemka, T Paul Chow + Show 2 more

https://doi.org/10.4028/www.scientific.net/msf.338-342.1211

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Journal: Materials Science Forum	Publication Date: May 10, 2000
Citations: 2

Abstract

Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant

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