Abstract
The bottom-up approach using self-assembled materials/processes is thought to be a promising solution for next-generation device fabrication, but it is often found to be not feasible for use in real device fabrication. Here, we report a feasible and versatile way to fabricate high-density, nanoscale memory devices by direct bottom-up filling of memory elements. An ordered array of metal/oxide/metal (copper/copper oxide/copper) nanodots was synthesized with a uniform size and thickness defined by self-organized nanotemplate mask by sequential electrochemical deposition (ECD) of each layer. The fabricated memory devices showed bipolar resistive switching behaviors confirmed by conductive atomic force microscopy. This study demonstrates that ECD with bottom-up growth has great potential to fabricate high-density nanoelectronic devices beyond the scaling limit of top-down device fabrication processes.
Highlights
The atoms are self-arranged from the bottom of the AAO template; they form a nanostructure from bottom-up self-assembly
During the ECD of Cu, Cu nanodots can be formed by the reduction of Cu2+ ion in the solution starting from the bottom of AAO templates
Cu bottom electrode/CuOx resistive switching layer/Cu top electrode were sequentially deposited by ECD using AAO nanotemplates
Summary
We used self-assembled AAO nanotemplates as masks for fabrication of uniform nanoscale Cu/ CuOx/Cu ReRAM devices. Cu bottom electrode/CuOx resistive switching layer/Cu top electrode were sequentially deposited by ECD using AAO nanotemplates. After ECD, the AAO templates were removed by NaOH solution and highly-ordered, high-density nanoscale resistive switching memory devices were fabricated by bottom-up self-assembly.
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