Abstract
We demonstrate that epitaxial growth temperatures can be lowered by in situ boron incorporation using rapid thermal processing chemical vapor deposition (RTPCVD). Heavily boron-doped epitaxial layers with very abrupt dopant transition profiles have been grown at 800 °C. Carrier concentrations as high as 5×1019 cm−3 were obtained with defect densities of the order of 102–103 cm−2. The film quality and surface morphology were closely related to dopant concentration. Higher dopant concentrations improved surface morphology.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
