Abstract
We have investigated out diffusion of boron under various ambient conditions. Boron out diffusion is significant in an H 2 ambient, while the out diffusion is negligible in an N 2 or He ambient. Comparing the analytical model to our experimental data, we identified the diffusion coefficient of boron in an H 2 ambient, and found that it is smaller than that in an N 2 ambient. The significant out diffusion in H 2 ambient is attributed to the enhancement of the boron transport coefficient at the Si surface. Negligible out diffusion in an N 2 or He ambient is attributed to the negligible transport coefficient at the surface.
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