Abstract

There has been growing interest in wide bandgap (WBG) semiconductors including SiC and GaN due to the increasing demands for electronic devices serving at high temperatures. However, to maximise the potential capacity of WBG devices, new high-temperature interconnection materials and processes are indispensable as the current existing Sn-based solder alloys and bonding processes developed for Si devices are unable to meet the reliability requirements. In the present work, reactive brazing alloys including Cu-15Ag-5P and Incusil (Ag-27.25Cu-12.5In-1.25Ti) with melting points above 600°C have been utilized as the interconnection materials which offer excellent properties under high operation temperature. The self-propagating exothermic reaction (SPER) was applied for the bonding process via an intense rapid local heating and cooling at a millisecond scale. The strong Cu/Cu-15Ag-5P/Cu and Cu/Incusil/Cu sandwich bonded structures have been created with the assistance of SPER, where the nanofoil was applied from the outside of stacked structures as an external heat source and the bonding process was conducted in the ambient atmosphere without using flux. It has been found that the P element in Cu-15Ag-P alloy has the self-flux effect, which is beneficial for the ultra-fast interfacial reaction process. The experiments where the nanofoil was placed inside of stacked structures between two sheets of brazing alloys have also been conducted, which exhibited the well-bonded interface microstructures between nanofoil and brazing alloys. The outlook on the design for practicality and industrial uses for SPER-assisted bonding with brazing alloys has also been discussed, as a potential viable assembly route for the high-temperature and high-power electronics packaging.

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