Body-bias effect on drain-induced barrier lowering in sphere-shaped-recess cell-array transistor

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Sphere-shaped-recess cell-array transistors (S-RCATs) have been playing a major role in DRAMs on the 70 nm design-rule. The S-RCAT has a recessed-channel structure that produces small drain-induced barrier lowering (DIBL) and large body-bias effect. The temperature and body-bias dependence of DIBL is studied for a S-RCAT. Negative DIBL is peculiarly observed under certain conditions. It is assumed that the negative DIBL originates from the increase of body-bias effect with increasing drain bias and temperature.