Body Effects on the Tuning RF Performance of PD SOI Technology Using Four-Port Network

Abstract

For partially depleted (PD) silicon-on-insulator (SOI) technology, body contact technology, such as T-gate (TB) body contact, is often used to suppress the floating body effect for analog or radio frequency (RF) circuits. RF performance is usually measured using a two-port network with body node connected to source node, thereby limiting the potential applications of PD SOI technology. In this letter, a four-port network structure was used for TB SOI MOSFET to evaluate the influence of the body potential on the RF performance. The gate to source and body capacitance were also extracted, individually. It was found that TB device can have an 89% improvement in the cut-off frequency ( ${f}_{T}$ ) by tuning the body voltage to 0.5 V when the device was operated at gate voltage equals to 0.4 V and drain voltage equals to 0.3 V. Power dissipation reduction was also observed with forward body bias and lower drain voltage. The results indicate that four-port network structure has potential in RF modeling for PD SOI technology that could facilitate integrating the PD SOI process into low power applications.