Abstract
Body-contacts (BC) partially depleted (PD) silicon-on-insulator (SOI) MOSFETs suffer from a loss of body potential control at frequencies higher than several hundreds of MHz due to the high value of the body resistance (Rbe) in currently available PD SOI technologies. This causes a reduction of the transconductance in dynamic threshold (DT) MOSFETs and an increase of output conductance in both DT MOSFETs and body-tied (BT) MOSFETs, thereby altering the performance of those devices for analogue/RF applications. A correct small signal modeling of these effects requires an accurate characterization of the body resistance and the body capacitances. This is what is proposed in this work, using for the first time 4-port VNA measurements
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