Abstract
Thin-film electroluminescent (TFEL) devices were fabricated on Si substrates by using SiO2 and Y2O3 films as insulator layers, and ZnS films as buffer layers. The device annealed at 850°C for 10min in Ar showed a purple EL with a peak at 425nm. Commission Internationale de l’Eclairage (CIE) color coordinates of x=0.217, y=0.223 under driving at 220V0−p of 1kHz trapezoidal wave. The purple EL from CaS:Cu TFEL device could be achieved, although luminance was weak, and a little longer wavelength component was included.
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