Abstract
Thermal carrier accelerating action and its effect on electroluminescence performance by insertion of a buffer layer have been systematically studied in ZnS:Tb, F thin-film electroluminescent (EL) devices. The EL devices studied have a structure of ITO/PbTiO3/ZnS:Tb, F/SiNx/Al. The result shows that the brightness obtained is rather low, but luminous efficiency is high compared to that of EL devices without an SiNx buffer layer. A mechanism for the improvement of luminous efficiency is postulated, and the role of the buffer layer is also discussed.
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