Abstract
Bistable nonvolatile memory devices with resistive switching characteristics were fabricated based on polyurethane (PU) mixing with 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD). The indium tin oxide/PU+PBD/aluminum device exhibited nonvolatile electrical bistable flash memory behavior with an ON/OFF state current ratio greater than 103. It has been demonstrated that the resistive switching characteristics in the memory device were strongly dependent on the treatment of the polymer blend by PBD. The additive of PBD in PU film reduced the current in the OFF-state significantly and improved the performance of device with the ON/OFF current ratio increased by 2 orders of magnitude, and ON and OFF states of the device can be maintained over 5 h without deterioration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
