Abstract
Ag8In14Sb55Te23 (AIST) films were deposited on k9 glass substrates by DC magnetron sputtering. A laser direct writing system was used to fabricate the crystalline arrays on as-deposited amorphous films. Electrical properties of crystallized bits were investigated by using conductive atomic force microscopy (CAFM). Bipolar resistance switching and memory effects were observed on nanoscale area of crystalline bits. The crystalline arrays exhibit reproducible bistable resistive switching induced by bias amplitude and polarity. It is hoped that multistate memory can be achieved by using AgInSbTe phase change material.
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