Abstract
Both unipolar and bipolar resistive switching behaviors are demonstrated and investigated in the TaTiN/HfOx/Pt structured RRAM devices. A physical model based on the recombination among the electron-depleted oxygen vacancies (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">O</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> ) and the oxygen ions (O <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-</sup> ) released from the TaTiN electrode is proposed to clarify the co-existed bipolar and unipolar resistive switching effect. In the proposed physical model, Joule heating controlled O <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-</sup> decomposition and electric-field controlled O <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-</sup> drift dominate the unipolar and bipolar resistive switching behaviors, respectively.
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