Abstract
The bipolar resistive switching characteristics have been investigated in the Co:BaTiO3 films deposited by sol-gel method. It has been demonstrated that such devices can be used as resistive random access memory cells without required electroforming. Ohmic transport and space charge limited current mechanism are dominant during the resistive switching. The ON/OFF ratio between the resistance at the high and low resistance states is more than 106, better than other perovskite films. The high ratio should be attributed to acceptor doping into the n-type semiconductor. The results imply that the ON/OFF ratio can be enhanced by controlling doping type and concentration in those insulating oxides.
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