Abstract
The bipolar resistive switching (BRS) characteristics in the magnesium titanate nickelate (MTN) films synthesized by the sol-gel method have been investigated. The BRS characteristics without forming process are fitted by the ohmic transport and the F-P emission mechanism. The ON/OFF current ratio is more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> , better than other perovskite films. In addition, the titanium (Ti) atom combines the bidentate ligands of nickel (II) acetylacetone to form the compound Ti acetylacetone chelate, which further improves the moisture resistivity of MTN films and maintains a coefficient of variation (CV) of less than 30% after 28 d under an atmospheric environment. Furthermore, good retention properties (two different resistance states can be maintained at a ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> s at 85°C) are observed. Given its thermal stability and good performance, MTN is a promising candidate for use in memory devices.
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