Abstract
Measurements of gate oxide stability in MOS VLSI development and manufacturing using substrate injection on two test structures are reviewed: the d.c. substrate injection via bipolar injector-MOS transistor (BiMOS) and the pulsed a.c. substrate injection via sourced-MOS capacitors (SMOSC). These techniques overcome the limitations of the MOS capacitor (MOSC) technique in measuring the fundamental dependencies of oxide trap charging and generation on the oxide electric field. They allow independent control of the oxide electric field, gate injection current, and electron energy. Application examples are described.
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