Biaxial, Hybrid Plastic-Elastic Relaxation in Micropatterned Semipolar InGaN Buffer Layers Improves Quality of Templated Quantum Well Emitters

Abstract

Despite significant progress and multiple creative approaches taken toward the realization of long-wavelength III-nitride based light emitters over the past decade, high double-digit external quantum efficiencies remain elusive for GaN/InGaN based devices for wavelengths longer than 525 nm. This stems from the large mismatch between the GaN and InGaN lattice that manifests in deleterious crystal strain gradients, degrades surface growth morphology, and introduces diverse and potent nonradiative defects.A promising route to mitigation of strain-based effects is templating epitaxial growth on relaxed InGaN epilayers; in particular, a known and controllable platform for uniaxial strain relaxation is the creation of 1-D misfit dislocation arrays at semipolar GaN/InGaN heterointerfaces. Leveraging work by Hardy et al. on achieving >200 nm thick, partially relaxed semipolar InGaN layers [1] and precise determination of InGaN epilayer strain state and composition by Young et al. [2], we explore the potential for 2-D buffer layer relaxation in (11-22) InGaN layers via micron- and sub-micron patterning. Cathodoluminescence microscopy and x-ray diffraction indicated significant increases in biaxial epilayer relaxation with increased pillar aspect ratio; quantum wells deposited atop these relaxed InGaN buffers showed dramatic threading dislocation reduction, luminescence and morphology improvements, and evidence of improved indium incorporation relative to planar samples at nominally identical growth conditions.[1] Hardy, M.T., Young, E.C., Hsu, P.S., Haeger, D.A., Koslow, I.L., Nakamura, S., DenBaars, S.P., Speck, J.S. Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20-21) InGaN/GaN heterostructures. Appl. Phys. Lett. 101, 132102 (2012).[2] Young, E. C., Romanov, A.E., Speck, J.S., Determination of composition and lattice relaxation in semipolar ternary (In,Al,Ga)N strained layers from symmetric x-ray diffraction measurements. Appl. Phys. Express. 4, 061001 (2011).