Abstract
We have succeeded in the growth of a high-quality semipolar {112̄2} GaN layer on an r-plane patterned sapphire substrate (r-PSS). In this study, we fabricated light-emitting diodes (LEDs) using relaxed thick InGaN layers with various In compositions. There were significant changes in polarization properties, indicating lattice mismatch reduction due to the use of a relaxed thick InGaN layer. Electroluminescence (EL) intensity was improved by using a relaxed thick InGaN layer with low In composition. In particular, the EL intensity improved approximately twofold compared with that in the case of LEDs without relaxed thick InGaN layers at an injection current of 200 mA.
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