Abstract
MuGFET devices show good gate-to-channel control, reducing short channel effects and increased current drive [1] and their performance can be improved through implementation of mechanical stress in the silicon fin. In th is wor k we study t he stress distr ibution and transconductance behavior in unstrained and biaxially + uniaxially strained tri-gate SOI nMOSFETs with different fin dimensions through electrical characterization of experimental devices and 3D process and device numerical simulation. Experimental results of standard and strained devices were used to validate the simulations. The bi+uni stress technique delivered enhanced maximum transconductance.
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