Beitrag zur Berechnung der strahlenden Rekombinationswahrscheinlichkeit B von eigenleitendem Silicium / Contribution to the Calculation of the Radiative Recombination Probability B in Intrinsic Silicon

Abstract

Quantitative calculations of Varshni, using the theory of radiative recombination of van Roosbroeck and Shock- ley yielded a slight increase of the recombination probabi­lity B with temperture T. Measurement of Schlangenotto et al demonstrated in contrast a strong decrease of B with T. It is pointed out, that this discrepancy is only a conse­quence of using approximative ni values (intrinsic carrier concentration) by Varshni. Introduction of new, corrected data of ni yields now a remarcable agreement between calculation and measurement.