Abstract
The empirical expressions for the energy bandgap and intrinsic carrier concentration as a function of temperature and entire composition range are proposed for GaAs1-xPx and AlxGa1-xAs. In the calculation of bandgap the nonlinearity of the band structure and the direct-indirect cross-over effect are taken into account by matching a bowing parameter. The bandgaps so obtained are used to calculate the intrinsic carrier concentrations by using Fermi-Dirac Statistics and Kane nonparabolic approximation of band structure. The calculated results for energy bandgaps are in good agreement with the available data, while the values for intrinsic carrier concentration at two extreme values of x give fair agreement.
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