Intrinsic carrier concentration of Hg1−xCdxTe

Abstract

The intrinsic carrier concentration ni is measured for Hg1−xCdxTe with 0.205⩽x⩽0.22 and x=0.29 and 150<T<320 K. The measurements are based on Hall data of uncompensated well-characterized samples. In addition to the galvanomagnetic measurements, photoconductive response and infrared transmittance have been used to determine and to verify the uniformity and composition of the samples. The experimental data are compared with calculations of the intrinsic carrier concentration which are based on an expression for the band gap recently measured. The following expression for the intrinsic carrier concentration is obtained: ni=[1.265×1016T3/2(6+x)−3/2 E3/2G]{1+[1+22.72(6+x)3/2E−3/2G exp(EG/KT)]1/2}−1 (cm−3), where the band gap EG is given by EG(eV) =6.006×10−4T (1−1.89x)+1.948x−0.337.