Abstract
Boronization based on electron cyclotron resonance (ECR) discharges is studied in a linear laboratory device under a parallel magnetic field of ∼ 0.1 T. A 2.45 GHz ECR discharge in a low-pressure helium decaborane mixture gives thin boron films localized on the walls near the gas inlet. In order to understand such film distributions, artificial deposition on plasma-exposed substrates in carried out. Two types of deposition processes are successfully discriminated in the magnetized plasma. One is neutral-induced deposition near the gas inlet and the other is ion-induced deposition in a downstream region. The latter plays a significant role in high-field high-density discharges. A simple scaling of deposition profile for each type of deposition is given along with its implication for achieving a deposition uniformity.
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