Abstract
This paper reports new results on bandgap narrowing in self aligned polysilicon emitter bipolar transistors. Using temperature dependent current gain measurements, we show that the tail region of the implanted base plays a dominant role in the effective bandgap narrowing of the base. This result will be very important for the development of pseudo-heterojunctions and low temperature-operation bipolar transistors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
