Abstract
Two-dimensional (2D) materials may be used to fabricate electronic devices and circuits with enhanced electronic properties. Memristors made of hexagonal boron nitride (h-BN) have shown potential for many applications; however, in most cases they are tested using the current limitation tool of the semiconductor parameter analyzer, which does not match real circuit implementations and produces current overshoots. In this article, we present the first all-2D materials-based one-transistor- one-memristor (1T1M) cells exhibiting threshold-type RS. We connect 4 μm2 molybdenum disulfide (MoS2) transistors in series with 0.3 μm2 h-BN memristors, leading 1T1M cells able to self-limiting the current. The switching is observed at low voltages below 1 V for >1000 cycles. Our results are a step forward towards the use of 2D materials in electronic devices and circuits.
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