Abstract
The addition of a barrier layer to Ni-Au-Ge Ohmic contacts on n-InGaAs were investigated over a range of alloying/sintering temperatures and surface pre-treatments. A 20% HCl dip followed by deposition of Ni-Au-Ge-ZrB2-Au produced good ohmic contacts, electrically and physically. These had contact resistance values of 0.33 Ω.mm as deposited and a minimum of 0.05 Ω.mm for a peak sinter temperature of 260°C. Specific contact resistivity was in the 10-7 Ω.cm2 range. Contact stability and morphology were shown to be enhanced by use of the barrier layer. Using a barrier layer there was no significant rise in contact resistance after 100 h at 300°C; without a barrier layer the resistance increased by 73%. J-FETs fabricated in InGaAs on InP with a ZrB2 barrier have been fabricated successfully. The measured contact resistance was < 0.03 Ω.mm which has contributed to the good current and transconductance characteristics.
Published Version
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