Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

Abstract

A time- and temperature-dependent differential-transmission technique is used to study the bandgap dependence of Auger recombination in Ga-free InAs/InAsSb type-II superlattices (T2SLs). The bandgap energies are varied between 290 meV (4.3 μm) and 135 meV (9.2 μm) by engineering the layer thickness and alloy Sb concentration. A long-wave infrared structure with 135 meV bandgap energy is found to have an Auger coefficient of 9 × 10−26 cm6/s at 77 K. The measured Auger coefficients increase with decreasing bandgap from approximately 3 × 10−27 cm6/s for mid-wave infrared bandgaps to 2 × 10−25 cm6/s for long-wave infrared bandgaps at 77 K. The measured T2SL Auger coefficients are compared to predicted Auger coefficients for HgCdTe.