Abstract
The band alignments of the Bi2Te3/CdTe (111)B (Te-terminated) heterojunction were investigated using high-resolution x-ray and ultraviolet photoemission spectroscopy. The measured valence band offset and the conduction band offset of the Bi2Te3/CdTe were 0.22 ± 0.05 and 1.12 ± 0.05 eV, respectively, and indicated that the Bi2Te3/CdTe heterojunction had a type I band structure.
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More From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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