Abstract
AbstractThe measured transport properties of non‐stoichiometric GeTe have been satisfactorily analysed on the basis of a two‐carrier model and the various band parameters have been evaluated. In particular the variation of the carrier density of the system with composition has been obtained and then compared to the total number of excess atoms in the non‐stoichiometric lattice. It is found that the defects occurring in GeTe due to these excess atoms are of a complex nature, except for compositions close to stoichiometry where singly ionized vacancies are the dominant defect.
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